Deposition of Al-doped ZnO thin-films with radio frequency magnetron sputtering for a source/drain electrode for pentacene thin-film transistor |
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Authors: | Dong-Jin Yun |
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Affiliation: | Laboratory for Advanced Molecular Processing, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea |
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Abstract: | Al-doped ZnO thin-films were deposited with the radio frequency magnetron sputtering technique at various temperatures and sputtering powers for a source/drain electrode in the pentacene thin-film transistor. With the increase in the deposition temperature and the decrease in the radio frequency sputtering power, the crystallinity was increased and the surface roughness was decreased, which lead to the decrease in the electrical resistivity of the film. Al-doped ZnO film deposited at 200 °C and sputtering power of 50 W showed a low resistivity (9.73 × 104 μΩcm), high crystallinity, low roughness and uniform surface morphology. The pentacene thin-film transistor fabricated with Al-doped ZnO film as a source/drain electrode showed a device performance, (mobility: 7.89 × 10− 3 cm2/Vs and on/off ratio: ~ 5 × 104) which is comparable with an indium tin oxide electrode grown at room temperature. |
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Keywords: | Al-doped zinc oxide Pentacene Resistivity Crystallity Thin film transistor X-ray diffraction Atomic force microscopy Ultraviolet photoelectron spectroscopy |
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