Atmospheric pressure PECVD of SiO2 thin film at a low temperature using HMDS/O2/He/Ar |
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Authors: | YS Kim JT Lim GY Yeom |
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Affiliation: | a Department of Advanced Materials Science & Engineering, Sungkyunkwan University, Chunchun-Dong 300, Jangan-Gu, Suwon 440-746, Republic of Korea b SKK Advanced Institute of Nano Technology, Sunkyunkwan University, Chunchun-Dong 300, Jangan-Gu, Suwon 440-746, Republic of Korea |
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Abstract: | SiO2-like thin films were deposited at a low temperature (< 50 °C) by a remote-type, atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using a pin-to-plate-type, dielectric barrier discharge with gas mixtures containing hexamethyldisilazane (HMDS)/O2/He/Ar. The film characteristics were investigated according to the HMDS and O2 flow rates. To obtain a more SiO2-like thin film, an adequate combination of HMDS and oxygen flow rates was required to remove the -(CH3)x bonding in the HMDS and to oxidize the Si in HMDS effectively. At the optimized flow rates, the surface roughness of the SiO2-like thin film was also the lowest. By using HMDS (50 sccm) and O2 (500 sccm) flow rates in the gas mixture of HMDS/O2/He (2 slm)/Ar (600 sccm), SiO2-like thin films with a low impurity (< 6.35% C) were obtained at a deposition rate of approximately 10.7 nm/min. |
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Keywords: | Atmospheric pressure Deposition Silicon dioxide Hexamethyldisilazane (HMDS) |
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