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Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals |
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| Authors: | Jong Hyun Lee Seung Nam Cha Do Seok Seo Jin Pyo Hong |
| Affiliation: | a Novel Functional Materials and Device Lab, Department of Physics, Hanyang University, Seoul 133-791, Republic of Korea b Samsung Advanced Institute of Technology, P.O. Box 111 Suwon 440-600, Republic of Korea c WONIL Image Maker, INC., No 212 2089 Jeongwang-Dong, Siheung, 429-450, Republic of Korea |
| Abstract: | High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz-tube located inside the chamber during co-sputtering process. The AlN codoped ZnO film shows excellent p-type behavior with a high mobility and a hole concentration of 154 cm2°V− 1s− 1 and about 3 × 1018°cm− 3 at 600 °C, respectively. Electrical properties of p-n homo-junction devices based on p-type ZnO film are also discussed. |
| Keywords: | ZnO Aluminium-nitride codoped p-type Homojunction |
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