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Comparative study of electro-physical properties of heterostructures containing PECVD nanocrystalline and anodic porous silicon layers |
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| Authors: | V.A. Vikulov V.V. Korobtsov K. Kim J. Yi |
| Affiliation: | a Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia b School of Information and Communication Engineering, Sungkyunkwan University, 300, Chunchun-Dong, Jangan-gu, Suwon-City, Kyunggi-Do, 440-746, South Korea c Department of Energy Science, Sungkyunkwan University, 300, Chunchun-Dong, Jangan-gu, Suwon-City, Kyounggi-Do, 440-746, South Korea |
| Abstract: | We performed a comparative study of the electro-physical properties of heterostructures containing PECVD nanocrystalline silicon (nc-Si) and electro-chemically etched porous silicon (PS) layers over a wide range of thicknesses, in terms of their energy parameters. Based on the proposed analytical expressions and the experimental current-voltage and capacitance-voltage characteristics, we studied the characteristics of the surface states at the nc-Si(or PS) interfaces in Pd-nc-Si(or PS)-p-Si heterostructures. The results revealed that the surface states play an essential role in the carrier transport in both types of heterostructures that were investigated. |
| Keywords: | Nanocrystalline silicon Porous silicon Surface states Sub-band Heterostructure |
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