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Amorphous In-Ga-Zn-O thin-film transistor with coplanar homojunction structure |
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| Authors: | Ayumu Sato Mikio Shimada Ryo Hayashi Kenji Nomura Masahiro Hirano Hideo Hosono |
| Affiliation: | a Canon Incorporated, 3-30-2, Shimomaruko, Ohta, Tokyo 146-8501, Japan b ERATO-SORST, JST, Tokyo Institute of Technology, Yokohama, Japan c Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, Japan d Frontier Research Center, Tokyo Institute of Technology, Yokohama, Japan |
| Abstract: | Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with a coplanar homojunction structure are demonstrated. The coplanar source and drain regions made of a-IGZO were formed by depositing a hydrogenated silicon nitride (SiNX:H) layer onto the a-IGZO layer. The a-IGZO regions on which the SiNX:H layer was directly deposited showed the low resistivity of 4.7 × 10−3 Ω cm and degenerated conduction. The fabricated TFT showed excellent transfer and output characteristics with a field-effect mobility of 11 cm2 V− 1 s− 1, a subthreshold swing of 0.17 V decade− 1, and an on-to-off current ratio larger than 1 × 109. The width-normalized source-to-drain resistance (RsdW) calculated using a channel resistance method was 51 Ω cm. This TFT also showed good stability over environment change and under electrical stress. |
| Keywords: | Amorphous Oxides Semiconductors Transparent TFT |
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