Impurity dependent semiconductor type of epitaxial CuFeO2 (111) thin films deposited by using a pulsed laser deposition |
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| Authors: | Dong Hyeok Choi Jong Soo Hong In-Bo Shim |
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| Affiliation: | a Department of Physics, Kookmin University, Seoul 136-702, Republic of Korea
b Corporate R&D Institute, Samsung Electro-mechanics Co., LTD., Gyunggi-do 443-743, Republic of Korea |
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| Abstract: | We have prepared CuFeO2 thin films successfully oriented to the (111) direction on amorphous glass substrates by PLD. The average grain size analyzed by SEM images is about 80-90 nm, and CuFeO2 grains are formed to the hexagonal flat shape which means CuFeO2 with the rhombohedral structure was hexagonally grown on the amorphous glass substrate. P-type conductivities are commonly governed by impurities of the amount of metallic Cu phase. However, it was found that the highly (111) oriented CuFeO2 film shows insulation properties and CuFe2O4 phase affects the change of the type of semiconductor from p-type to n-type. |
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| Keywords: | CuFeO2 thin film p-Type semiconductor PLD |
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