Transparent amorphous In-Ga-Zn-O thin film as function of various gas flows for TFT applications |
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| Authors: | CH Jung YK Kang |
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| Affiliation: | a SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea
b School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea |
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| Abstract: | The electrical and optical properties of amorphous indium gallium zinc oxide (a-IGZO) films, which can be used as a channel layer, deposited by radio frequency (rf) magnetron sputtering system at room temperature (RT), were investigated as function of various gas flows. The optical transmittance of films deposited under Ar, O2 / Ar + O2 and O2 / Ar-4% H2 + O2 atmospheres in the visible wavelength was consistently above 90% at a wavelength of 550 nm at all gas flows, although the film deposited under Ar-4% H2 atmosphere exhibited a transmittance of below 50%. The carrier concentration and mobility of the a-IGZO films fabricated under Ar and Ar-4% H2 were observed slight decrease as a function of the flow, respectively. The thin film transistors (TFTs) with an a-IGZO channel deposited under Ar and Ar-4% H2 atmosphere exhibited the following good characteristics: Vth of 0.34 V, µFE of 3.6 cm2 V− 1 s− 1, on/off ratio of 106, and S value of 0.04 V decade− 1. |
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| Keywords: | Transparent amorphous oxide semiconductor a-IGZO Oxide TFTs |
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