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Electronic structure of amorphous InGaO3(ZnO)0.5 thin films |
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| Authors: | Deok-Yong Cho Cheol Seong Hwang Woo Seok Choi J.-Y. Kim B.-G. Park S.-J. Oh Jae Kyeong Jeong |
| Affiliation: | a Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea b ReCOE & FPRD, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea c Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea d Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea e Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea f Corporate R&D Center, Samsung SDI Co., LTD, Yongin-Si, Gyeonggi-Do 449-902, Republic of Korea g Department of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea |
| Abstract: | The electronic structure of amorphous semiconductor InGaO3(ZnO)0.5 thin films, which were deposited by radio-frequency magnetron sputtering process, was investigated using X-ray photoelectron spectroscopy and O K-edge X-ray absorption spectroscopy. The overall features of the valence and conduction bands were analyzed by comparing with the spectra of Ga2O3, In2O3, and ZnO films. The valence and conduction band edges are mainly composed of O 2p and In 5sp states, respectively. The bandgap of the films determined by spectroscopic ellipsometry was approximately 3.2 eV. Further, it is found that the introduction of oxygen gas during the sputter-deposition does not induce significant variations in the chemical states and band structure. |
| Keywords: | InGaZnO Transparent conducting oxide X-ray photoelectron spectroscopy X-ray absorption spectroscopy |
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