Amorphous silicon thin film solar cells deposited entirely by hot-wire chemical vapour deposition at low temperature (< 150 °C) |
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Authors: | Fernando Villar Jordi Escarré Daniel Ibarz Rubén Roldán Marco Stella Delfina Muñoz José Miguel Asensi Joan Bertomeu |
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Affiliation: | Departament de Física Aplicada i Òptica, Universitat de Barcelona, Martí i Franquès 1-11, E08028-Barcelona, Spain |
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Abstract: | Amorphous silicon n-i-p solar cells have been fabricated entirely by Hot-Wire Chemical Vapour Deposition (HW-CVD) at low process temperature < 150 °C. A textured-Ag/ZnO back reflector deposited on Corning 1737F by rf magnetron sputtering was used as the substrate. Doped layers with very good conductivity and a very less defective intrinsic a-Si:H layer were used for the cell fabrication. A double n-layer (µc-Si:H/a-Si:H) and µc-Si:H p-layer were used for the cell. In this paper, we report the characterization of these layers and the integration of these layers in a solar cell fabricated at low temperature. An initial efficiency of 4.62% has been achieved for the n-i-p cell deposited at temperatures below 150 °C over glass/Ag/ZnO textured back reflector. |
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Keywords: | Hot-wire deposition Amorphous materials Solar cells |
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