Supermagnetron plasma CVD of highly effective a-CNx:H electron-transport and hole-blocking films suited to Au/a-CNx:H/p-Si photovoltaic cells |
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Authors: | Haruhisa Kinoshita Makoto Kiyama Hiroyuki Suzuki |
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Affiliation: | Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku Hamamatsu 432-8011, Japan |
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Abstract: | Hydrogenated carbon nitride (a-CNx:H) films (0-500 nm) were deposited on p-Si wafers to make Au/a-CNx:H/p-Si photovoltaic cells using i-C4H10/N2 supermagnetron plasma chemical vapor deposition. At a lower electrode RF power (LORF) of 50 W and an upper electrode RF power (UPRF) of 50-800 W, hard a-CNx:H films with optical band gaps of 0.7-1.0 eV were formed. At a film thickness of 25 nm (UPRF of 500 W), the open circuit voltage and short circuit current density were 247 mV and 2.62 mA/cm2, respectively. The highest energy conversion efficiency was 0.29%. The appearance of the photovoltaic phenomenon was found to be due to the electron-transport and hole-blocking effect of thin a-CNx:H film. |
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Keywords: | Amorphous carbon a-CNx:H Photovoltaic cell Chemical vapor deposition |
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