Precursor Cat-CVD a-Si films for the formation of high-quality poly-Si films on glass substrates by flash lamp annealing |
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| Authors: | Keisuke Ohdaira Kazuhiro Shiba Hiroyuki Takemoto Tomoko Fujiwara Yohei Endo Shogo Nishizaki Young Rae Jang Hideki Matsumura |
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| Affiliation: | Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan |
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| Abstract: | Amorphous Si (a-Si) films with lower hydrogen contents show better adhesion to glass during flash lamp annealing (FLA). The 2.0 µm-thick a-Si films deposited by plasma-enhanced chemical vapor deposition (PECVD), containing 10% hydrogen, start to peel off even at a lamp irradiance lower than that required for crystallization, whereas a-Si films deposited by catalytic CVD (Cat-CVD) partially adhere even after crystallization. Dehydrogenated Cat-CVD a-Si films show much better adhesion to glass, and are converted to polycrystalline Si (poly-Si) without serious peeling, but are accompanied by the generation of crack-like structures. These facts demonstrate the superiority of as-deposited Cat-CVD a-Si films as a precursor material for micrometer-thick poly-Si formed by FLA. |
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| Keywords: | Catalytic CVD Flash lamp annealing Polycrystalline Si Hydrogen content Dehydrogenation Glass substrate Adhesion Plasma-enhanced CVD |
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