Effect of the plasma treatment of anode electrode of the organic light-emitting diodes on the growth of hole-injection layer

In this paper, we focused on the effects of the plasma treatment of the anode electrode of organic light emitting diodes (OLED) on the growth of hole-injection layer (HIL). The CF₄ plasma (CF₄-P) treatment, which is known for efficient method to enhance the performance of OLED, was not effective on the OLED with the HIL material copper phthalocyanine (CuPc). The CF₄-P treated OLED showed remarkably reduced electroluminescence (EL) characteristics while the O₂ plasma treated OLED showed improved EL efficiency. The dependence of the CuPc growth on the polarity of substrate induced the morphological difference of the HIL, and finally resulted in the different device characteristics.