Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells |
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Authors: | F Finger O Astakhov R Carius A Dasgupta A Gordijn Y Huang M Luysberg L Xiao |
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Affiliation: | a IEF-5 Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany b IFF, Mikrostruktur, Forschungszentrum Jülich, 52425 Jülich, Germany |
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Abstract: | Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (µc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the µc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%. |
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Keywords: | Catalytic CVD Hot-wire CVD SiC alloys Thin film solar cells |
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