Highly reliable ECR N2O-plasma polyoxide grown on heavily phosphorus-doped polysilicon films |
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Authors: | Nae-in Lee Jin-Woo Lee Chul-Hi Han |
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Affiliation: | (1) Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, 373-1, Kusong-dong, Yusong-gu, 305-701 Taejon, Korea;(2) Semiconductor R & D Center, Samsung Electronics Co. Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea |
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Abstract: | Reliability of polyoxide grown by electron cyclotron resonance (ECR) N2O-plasma on heavily phosphorus-doped polysilicon has been investigated for the interpoly dielectrics (IPDs) of nonvolatile memories (NVMs). ECR N2O-plasma polyoxide grown on polysilicon with phosphorus of 1 × 1021 cm−3 exhibits a significantly high breakdown field of 10 MV/cm and low electron trapping rate of 0.5 V, which are regardless of phosphorus concentration. The improvements are attributed to the smooth polyoxide/polysilicon interface, low phosphorus concentration, and nitrogen-rich layer with strong silicon-nitrogen bonds at the polyoxide/polysilicon interface. |
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Keywords: | ECR N2O-plasma polyoxide silicon phosphorus doped polysilicon |
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