| 渐变组分a-Si∶H/a-SiC∶H膜内部电场的研究 |
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| 引用本文： | 马瑾,韩圣浩,陆大荣. 渐变组分a-Si∶H/a-SiC∶H膜内部电场的研究[J]. 无机材料学报, 1991, 0(2) |
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| 作者姓名： | 马瑾 韩圣浩 陆大荣 |
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| 作者单位： | 山东大学物理系 济南(马瑾，韩圣浩)，青岛大学物理系 青岛(陆大荣) |
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| 摘 要： | 本文报导了渐变组分 a-Si∶H/a-SiC∶H 膜的制备,研究了渐变膜的电学、光学特性,用 EHT 方法对 a-Si∶H 和 a-SiC∶H 的能态密度进行了计算。提出该渐变膜是一种连续变带隙材料,其内部存在自建电场,并从实验上确定了自建电场的方向。
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| 关 键 词： | a-Si∶H/a-SiC∶H 薄膜 渐变组分 EHT 方法 自建电场 |
Research on Internal Electric Field of Gradual Change Composition a-Si:H/a-SiC:H Film |
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| Ma Jin Han Shenghao. Research on Internal Electric Field of Gradual Change Composition a-Si:H/a-SiC:H Film[J]. Journal of Inorganic Materials, 1991, 0(2) |
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| Authors: | Ma Jin Han Shenghao |
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| Abstract: | Preparation of gradual change composition a-Si:H/a-SiC:H film has been re-ported and the characteristics of the film have been analysed.The densities of statesof a-Si:H and a-SiC:H have been calculated by EHT method It is showed.that theenergy gap of the film changes continuously and there is an internal electric fieldestablished by itself in the film.The direction of the internal electric field has beendetermined by our experiments. |
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| Keywords: | Gradual change composition EHT method Electric field established by itself |
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