| ECR微波等离子体CVD制备a—Si：H薄膜 |
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| 引用本文： | 万英超 林玉瓶. ECR微波等离子体CVD制备a—Si：H薄膜[J]. 浙江大学学报(工学版), 1992, 26(6): 688-695 |
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| 作者姓名： | 万英超 林玉瓶 |
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| 作者单位： | [1]信电系 [2]半导体材料研究所 |
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| 摘 要： | 电子回旋共振微波等离子体化学气相沉积（ECRPCVD）应用于制备a-Si:H薄膜，其沉积速率大于射频等离子体化学气相沉积（RFPCVD），而且在基体不加温情况下也能获得比较满意的特性，根据红外吸收谱分析，并经伸缩振动模吸收带的积分计算，得出样品的含氢量为20－30％，光学带隙E0为1．80eV左右，暗电导率小于10^10s/cm，倘若基体适当加温，a-Si:H膜的性能将更为优良。
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| 关 键 词： | 微波等离子体 CVD a－Si：H膜 薄膜 |
a-Si:H films prepared by ECR plasma CVD |
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| Wan Yingchao Lin Yupin. a-Si:H films prepared by ECR plasma CVD[J]. Journal of Zhejiang University(Engineering Science), 1992, 26(6): 688-695 |
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| Authors: | Wan Yingchao Lin Yupin |
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| Affiliation: | Wan Yingchao Lin Yupin(Semiconductor Materials Research Institute)(Department of Communication and Electron Engineering) |
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| Abstract: | The electaon cyclotron resonance microwave plasma chemical vapor deposition (ECRPCVD) method has been applied to prepare a-Si:H films. The deposition rafe of ECRPCVD is higher than that of RFPCVD. And without substrate heating during deposition by ECRPCVD the characteristics of a-Si:H films are satisfactory. According to IR absorbance spectra the bonded hydrogen content of the samples are 20-30% that they are estimated with the integrated absorption for the stretching mode,and the optical band-gap is 1. 8eV around. The dark conductivity is lower than 10-10s/cm . The characteristics would be somewhat improved with the substrates heating properly. |
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| Keywords: | electron cyclotron resonance microwave plasma CVD a -Si: H films |
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