| Ni基n型SiC材料的欧姆接触机理及模型研究 |
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| 引用本文： | 郭辉,张义门,张玉明,吕红亮.Ni基n型SiC材料的欧姆接触机理及模型研究[J].固体电子学研究与进展,2008,28(1):42-45. |
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| 作者姓名： | 郭辉 张义门 张玉明 吕红亮 |
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| 作者单位： | 1. 西安电子科技大学微电子学院,西安,710071
2. 教育部宽禁带半导体材料重点实验室,西安,710071 |
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| 基金项目： | 国家自然科学基金
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国家重点基础研究发展计划(973计划) |
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| 摘 要： | 研究了Ni基n型SiC材料的欧姆接触的形成机理,认为合金化退火过程中形成的C空位(Vc)而导致的高载流子浓度层对欧姆接触的形成起了关键作用。给出了欧姆接触的能带结构图,提出比接触电阻ρC由ρC1和ρC2两部分构成。ρC1是Ni硅化物与其下在合金化退火过程中形成的高载流子浓度层间的比接触电阻,ρC2则由高载流子浓度层与原来SiC有源层之间载流子浓度差形成的势垒引入。该模型较好地解释了n型SiC欧姆接触的实验结果,并从衬底的掺杂水平、接触金属的选择、合金化退火的温度、时间、氛围等方面给出了工艺条件的改进建议。
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| 关 键 词： | 碳化硅 欧姆接触 退火 碳空位 |
| 文章编号： | 1000-3819(2008)01-042-04 |
| 修稿时间： | 2006年4月28日 |
Investigation of the Mechanism and Model about Ni Based Ohmic Contacts to n-type SiC |
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| GUO Hui,ZHANG Yimen,ZHANG Yuming,LV Hongliang.Investigation of the Mechanism and Model about Ni Based Ohmic Contacts to n-type SiC[J].Research & Progress of Solid State Electronics,2008,28(1):42-45. |
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| Authors: | GUO Hui ZHANG Yimen ZHANG Yuming LV Hongliang |
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| Affiliation: | GUO Hui ZHANG Yimen ZHANG Yuming LV Hongliang(Microelectronic School,Xidian University,Xi\'an,710071,CHN)(Key Lab.of Ministry of Education for Wide B,-gap Semiconductor Materials , Devices,CHN) |
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| Abstract: | The mechanism of Ni based ohmic contacts to n-type SiC is studied.The creation of carbon vacancies(Vc)during high-temperature annealing in the near-interface region of the SiC allow increased electron to transport through the Schottky barrier,leading to ohmic behavior of the contact.According to the band structure of ohmic contact,the specific contact resistance ρC consists of two parts(ρC1 and ρC2).ρC1 occurs between the contact metal and its underlying highly doped semiconductor layer(NDC)after alloying.ρC2 is brought about by a barrier appeared due to the concentration difference between the NDC and ND in the SiC active layer.This model is used to explain the experiment results and to optimize the process of the ohmic contact to n-type SiC. |
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| Keywords: | SiC ohmic contact annealing carbon vacancies |
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