非对称异质波导半导体激光器结构

提出了一种非对称异质波导半导体激光器外延结构,即通过优化选择材料体系和结构厚度,对器件外延层的P侧限制结构和N侧限制结构分别设计,从而降低器件的电压损耗,使其满足高输出功率以及高的电光转换效率的要求.从载流子的输运和限制等微观机制出发,对器件的主要输出特性进行了理论分析和数值模拟,并以此为根据设计和制作了一种1060 nm In Ga As/Ga As单量子阱非对称异质波导结构半导体激光器,并对器件的主要输出特性进行了测试.实验结果表明,非对称异质结构是降低器件的电压降、增大限制结构对注入载流子的限制,提高半导体激光器电光转换效率的有效措施.

An asymmetric heterostructure waveguide structure for semiconductor lasers

This paper present a epitaxy structure with asymmetric hetero-structure waveguide for diode laser, which optimized by selecting material system and thickness of each layer. The different design inP-confinement and N-confinement reduce voltage loss and meet the requirement of high power and high electro-optical efficiency. Based on the theory of transportation and confinement, the principal output characteristics are analyzed and simulated. After that, a 1060 nm diode laser with single quantum well and asymmetric hetero-structure waveguide is fabricated and characterized. The measurement results shows that asymmetric hetero-structure waveguide is a effective method to reduce voltage loss and improve the confinement of injection carriers and electro-optical efficiency.