| 声表面波器件晶圆键合工艺研究 |
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| 引用本文： | 卢丹丹,米佳,彭兴文,谭昕怡,金中. 声表面波器件晶圆键合工艺研究[J]. 压电与声光, 2020, 42(3): 361-364 |
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| 作者姓名： | 卢丹丹 米佳 彭兴文 谭昕怡 金中 |
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| 作者单位： | （中国电子科技集团公司第二十六研究所，重庆 400060） |
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| 摘 要： | 声表面波器件向小型化、集成化、更高性能方向发展,需要制作复合单晶薄膜和采用晶圆级封装。该文针对关键工艺中的晶圆键合工艺开展研究,提出工艺要求,简述有关键合工艺要求和设备特点,并进行了金属键合工艺验证。实验证明,设备和工艺能满足产品封装要求。
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| 关 键 词： | 声表面波器件 晶圆级封装 复合单晶薄膜 晶圆键合 设备特点 |
Study on Wafer Bonding Technology of SAW Devices |
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| LU Dandan,MI Ji,PENG Xingwen,TAN Xinyi,JIN Zhong. Study on Wafer Bonding Technology of SAW Devices[J]. Piezoelectrics & Acoustooptics, 2020, 42(3): 361-364 |
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| Authors: | LU Dandan MI Ji PENG Xingwen TAN Xinyi JIN Zhong |
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| Affiliation: | (The 26th Institute of China Electronics Technology Group Corporation, Chongqing 400060, China) |
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| Abstract: | The fabrication of composite single crystal film and the use of wafer level packaging are needed with the development of surface acoustic wave devices toward miniaturization, integration and higher performance. In this paper, the key process of wafer bonding is studied, and the process requirements are proposed. The key process requirements and equipment characteristics are briefly described, and the metal bonding process is verified. The experiment shows that both the equipment and process can meet the product packaging requirements. |
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| Keywords: | surface acoustic wave device wafer level packaging composite single crystal film wafer bonding equipment feature |
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