Space charge analysis in doped zinc phthalocyanine thin films

We present an improved method for the determination of the space charge density in organic semiconductors used as active layers in Schottky barriers. These measurements provide a powerful tool for the interpretation of basic properties such as the rectifying effect, doping process and carrier trapping mechanisms of films together with a way to assess the potential for sensor applications. Metal/molecular semiconductor Schottky junctions were prepared on zinc phthalocyanine layers doped by a controlled exposure to the ambient air. The organic material is deposited on aluminium or heavily doped silicon substrates, in order to make a Schottky barrier (film thickness around 1 μm). An ohmic contact is obtained by a gold deposition on the strongly doped side of the molecular material. We have investigated the current-voltage and capacitance-voltage characteristics. The results are interpreted in terms of a space charge region at the interface with the substrate, followed by an extended semi-insulating layer.The contribution of these two regions to the total impedance is analyzed in well improved conditions of measurements.