Temperature effect on the photoluminescence intensity and Eu2+ excited state lifetime in EuGa2S4 and EuGa2S4:Er3+ |
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| Authors: | A. N. Georgobiani B. G. Tagiev O. B. Tagiev S. A. Abushov F. A. Kazymova T. Sh. Gashimova Xu Xurong |
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| Affiliation: | (1) Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia;(2) Institute of Physics, Academy of Sciences of Azerbaijan, pr. Javida 33, Baku, AZ1143, Azerbaijan;(3) Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, People’s Republic of China |
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| Abstract: | The photoluminescence (PL) spectra and Eu2+ excited state lifetime of EuGa2S4 and EuGa2S4:Er3+ have been studied in the range 78–500 K. The spectra show a band at 545 nm, due to the 4f 65d → 4f 7(8 S 7/2) transition. With increasing temperature, the full width at half maximum Γ(T) of the PL band of EuGa2S4 and EuGa2S4:Er3+ crystals increases from 0.15 to 0.22 and from 0.13 to 0.19 eV, respectively. Over the entire temperature range studied, Γ(T) is a linear function of T 1/2. The 545-nm emission intensity and Eu2+ excited state lifetime in EuGa2S4 and EuGa2S4:Er3+ vary exponentially with temperature. The luminescence quenching energies evaluated from the Arrhenius plots of I(103/T) and τ(103/T) coincide (0.10 eV) within the error of determination. |
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