首页 | 本学科首页   官方微博 | 高级检索  
     

高过载存储测试中抗过载技术的研究
引用本文:文丰,乔建忠,李艳. 高过载存储测试中抗过载技术的研究[J]. 传感器与微系统, 2009, 28(9): 31-33
作者姓名:文丰  乔建忠  李艳
作者单位:中北大学,电子测试技术国家重点实验室,山西,太原,030051 
基金项目:国家自然科学基金资助项目 
摘    要:介绍了高过载存储测试的系统组成和设计原理。对记录器抗高过载能力进行理论分析和试验证明,从电路和结构设计方面考虑提高抗高过载能力。应用ANSYS软件对结构进行仿真,并采用缓冲和灌封技术相结合的方案,使得防护效果更佳。经过试验证明:这种方案具有很高的可靠性。

关 键 词:高过载存储测试  抗高过载  侵彻  ANSYS仿真

Study on anti over-loaded technology in high over-loaded storage testing
WEN Feng,QIAO Jian-zhong,LI Yan. Study on anti over-loaded technology in high over-loaded storage testing[J]. Transducer and Microsystem Technology, 2009, 28(9): 31-33
Authors:WEN Feng  QIAO Jian-zhong  LI Yan
Affiliation:( Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China)
Abstract:The constitute and design theory of high over-loaded storage testing system are introduced. Theoretic analysis and experiment prove to the anti-high over-loaded capacity of recorder, the anti-high over-loaded capacity in circuit and structure design is improved. Structure simulation is made by ANSYS and combined cushioning with envelop. Examination shows that the way has high reliability.
Keywords:high over-loaded storage testing  anti-high over-loaded  penetration  ANSYS simulation
本文献已被 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号