N-polar GaN上的欧姆接触:材料制备、金属化方案与机理

氮极性(N-polar)GaN与镓极性(Ga-polar)GaN极性相反,且具有较高的表面化学活性,使其在光电子、微电子及传感器等领域逐渐受到关注。文章结合一些相关研究报道,综述了N-polar GaN上欧姆接触的研究进展。首先对N-polar GaN材料的制备进行了分析,随后对N-polar GaN的欧姆接触电极的金属化方案及欧姆接触机理等内容进行了综合讨论,以期为实际N-polar GaN欧姆接触研究提供一些参考。

Ohmic Contacts on N-polar GaN:Material Preparation, Metallization Schemes, and Contact Formation Mechanisms

N-polar GaN has high chemical activity and opposite polarity compared with conventional Ga-polar GaN, which make it receive a lot of attention recently in some study areas such as optoelectronics, microelectronics and sensor. Combined with some reports, the research progress of Ohmic contacts to N-polar GaN is reviewed. Firstly, the material preparations of N-polar GaN are analyzed. Subsequently, the metallization scheme of Ohmic contact electrode and the Ohmic contact mechanism are comprehensively discussed in order to provide some references for the research of Ohmic contacts to N-polar GaN.