Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes

We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga₂O₃ NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga₂O₃ NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga₂O₃ films (current level 9.9 × 10^-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga₂O₃ NP/SWNT increased by approximately 4 × 10⁵ times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10^-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga₂O₃ NPs and high conductivity and effective current spreading of SWNTs.