Film thickness effect on the properties of interconnection between YBCO and Si for superconductor and semiconductor integration |
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| Affiliation: | 1. Department of Electrical Engineering, Yonsei University, Seoul 120-749, South Korea;2. Applied Physics Laboratory, Division of Electronics and Information Technology, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, South Korea;3. Department of Physics, Ewha Womans University, Seoul 120-750, South Korea;1. Key Laboratory of Ferro & Piezoelectric Materials and Devices of Hubei Province, Faculty of Physics and Electronic Science, Hubei University, Wuhan, Hubei, 430062, China;2. Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China;3. Faculty of Materials Science and Chemistry, China University of Geosciences (Wuhan), Wuhan, 430074, China;4. Department of Aero & Auto Engineering, Loughborough University, Ashby Road, Loughborough, LE11 3TU, UK;1. Federal Institute of Education, Science and Technology Goiano, Campus Ceres, Ceres, GO, Brazil;2. Green Nanotechnology Group, University of Brasília, Brasília, DF, Brazil;3. Laboratory for Environmental and Applied Nanoscience, University of Brasília, Brasília, DF, Brazil;4. Laboratory of Medicinal and Technological Chemistry, University of Brasília, Brasília, DF, Brazil;5. School of Physics and Astronomy, University of Nottingham, Nottingham, Nottinghamshire, United Kingdom;1. School of Chemistry and Chemical Engineering & Institute for Energy Research, Jiangsu University, Zhenjiang 212013, PR China;2. School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, PR China;3. School of Pharmacy, Jiangsu University, Zhenjiang 212013, PR China;1. Photovoltaics Research Department, Korea Institute of Energy Research (KIER), Daejeon 34129, Republic of Korea;2. School of Materials Science and Engineering, Kyungpook National University, Daegu 41566, Republic of Korea;3. Department of Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea;4. Department of Electrical Engineering and Smart Grid Research Center, Jeonbuk National University, Jeonju 54896, Republic of Korea;1. Kotel’nikov IRE RAS, Mokhovaya 11-7, Moscow, Russia;2. National Research University of Science & Technology «MISIS», Lenin av., 4, Moscow, Russia |
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| Abstract: | YBa2Cu3O7−δ (YBCO) films were grown on Si using a buffer layer of yttria-stabilized zirconia (YSZ) by pulsed laser deposition. Interconnections between the YBCO film and the Si substrate using Au have been fabricated by lithography. The YBCO films showed zero-resistance critical temperatures in the range of 80–85 K and were found to be grown in the c–axis orientation. The structural properties of the films of various thicknesses were analyzed by XRD, SEM and Raman spectroscopy. Because of very different thermal expansion coefficients of Si and YBCO, there is a tendency to crack formation for films. The crack formation interrupts the current flow and increases the normal state resistance of the films. The effect of cracks on the contact resistances between YBCO films of various thicknesses and Si substrates through Au interconnections is reported. |
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