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High-resistance HTS SNS edge junctions
Affiliation:1. RIKEN SPring-8 Center, 1-7-22, Suehiro-cho, Tsurumi-ku, Yokohama, Kanagawa 230-0045, Japan;2. Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;3. Department of Physics and Mathematics, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa 252-5258, Japan
Abstract:HTS SFQ digital circuit applications require high resistance HTS Josephson junctions. We have investigated the factors affecting the resistance of SNS edge junctions which use Co-doped Y-Ba-Cu-O as the normal metal layer. Several parameters are found to have a surprisingly large effect on device resistance, including edge angle, base electrode material, and deposition conditions of the normal metal and counterelectrode. Controlling these factors has enabled the fabrication of high-quality, high-resistance (≈1 Ω) SNS edge junctions with 1-σ Ic spreads down to 10% and critical currents and IcRn products suitable for SFQ digital applications.
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