Overdamped NbN junctions with NbNx barriers formed by plasma nitridation |
| |
| Affiliation: | 1. College of Information, Mechanical and Electrical Engineering, Shanghai Normal University, Shanghai 200234, China;2. Shanghai Key Laboratory of Plant Molecular Sciences, College of Life Sciences, Shanghai Normal University, Shanghai 200234, China;1. State Key Laboratory Breeding Base of Green Pesticide and Agricultural Bioengineering, Key Laboratory of Green Pesticide and Agricultural Bioengineering, Ministry of Education, Guizhou University, Guiyang 550025, PR China;2. Sinphar Tian-Li Pharmaceutical Co., LTD, Hangzhou 311100, PR China |
| |
| Abstract: | We have fabricated NbN Josephson junctions with NbNx barriers formed by plasma nitridation on the surface of the base superconductive NbN layer. Both nonhysteretic junctions (overdamped junctions) and small-hysteretic ones have been obtained at 4.2 K by changing plasma nitridation conditions. An overdamped junction showed a product of the critical current Ic and junction resistance Rn (an IcRn product) of 0.95 mV at 4.2 K and the Ic exponentially decreased with increasing temperature. On the other hand, a small-hysteretic junction showed Superconductor-Insulator-Superconductor (SIS)-like characteristics in the temperature dependence of Ic and its current–voltage characteristics changed to nonhysteretic ones at the temperature more than 8 K. The IcRn product for the junction was 0.91 mV at 8.2 K. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
