| SIMS对氘靶钛膜中氘的分布研究 |
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| 引用本文： | 李宏发,翟国良.SIMS对氘靶钛膜中氘的分布研究[J].原子能科学技术,1996,30(1):65-68. |
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| 作者姓名： | 李宏发 翟国良 |
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| 作者单位： | 中国工程物理研究院核物理与化学研究所 |
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| 摘 要： | 用负的ＳＩＭＳ分析技术进行Ｈ同位素相对含量Ｔｉ膜深度变化的分析，获得了氘随膜深度变化的分布曲线。在接近膜表面的一个深度范围内，除有明显的Ｏ＾－、ＣＯ＾－和很微弱的ＯＨ＾－，ＯＤ＾－及ＣＨＯ＾－峰谱外，还有很大的Ｄ＾－二次离子质谱峰，氘的丰度估计约为９８％。在靶膜内部，氘的丰度达９９％以上。
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| 关 键 词： | 真空镀膜 SIMS 纵深分布 氘丰度 氘靶 钛膜 |
STUDY ON DEUTERIUM DISTRIBUTION IN DEUTERIUM-TITANIUM TARGET BY SIMS |
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| Li Hongfa, Zhai Guoliang.STUDY ON DEUTERIUM DISTRIBUTION IN DEUTERIUM-TITANIUM TARGET BY SIMS[J].Atomic Energy Science and Technology,1996,30(1):65-68. |
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| Authors: | Li Hongfa Zhai Guoliang |
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| Abstract: | Hydrogen isotope depth profiles in the titanium film are measured by the negative SIMS technique. The obtained spectra show that in the surface layer, besides some obvious peaks for O,CO- and some very weak peaks for OH-, OD- and CHO-, there is a very large peak for the second ion of D. The abundance of deuterium in the surface layer is estimated to be about 98%. In the interior of the Ti film, the abundance of deuterium become up to 99 %. In the area near the interface between the film and the substrate appears a small D peak and peak of trace amount O-.The analytical results are discussed. |
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| Keywords: | Vacuum depositiom Absorbing deuterium Negative SIMS Depth profile Abundance of deuterium |
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