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Measurements on a GaAs microstrip detector with 50 GeV/c electrons |
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| Authors: | W Braunschweig W Karpinski Th Kubicki K Lü belsmeyer J Ortmanns D Pandoulas G Pierschel C Rente R Siedling O Syben F Tenbusch M Toporowsky Th Wilms B Wittmer and W J Xiao |
| Affiliation: | I. Physikalishes Institut der RWTH Aachen Sommerfeldstrasse 28, D-52056, Aachen, Germany |
| Abstract: | A microstrip gallium arsenide detector (thickness 508 μm, strip width 100 μm, strip pitch and readout pitch 200 μm) has been tested in a 50 GeV/c electron beam at CERN. Using the low noise Viking preamplifier chip (shaping time  1.5 μs) signal to noise ratios up to 25 were measured depending on bias voltage and angle of incidence. Applying the so-called η-algorithm (using the impact position-sensitive charge sharing between adjacent strips) a resolution down to σ 20 μm could be obtained. |
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