The recovery of electron field-effect mobility on ion-beam-nitridized transistors with sacrificial oxide treatment

The use of a direct ion-beam-nitridized (IBN) mask can reduce the field oxide lateral encroachment from 1.0 to 0.35 µm per device edge. However, mobility degradation has been observed on IBN transistors. We found that with a sacrificial oxide (SO) treatment, the electron field-effect mobility is increased from 573 cm²/V . s to 640 cm²/V . s-a value similar to the local oxidation of silicon (LOCOS) process.