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Numerical simulation of nanoparticle-generating electronegative plasmas in the PECVD of nanostructured silicon film |
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| Authors: | I. Denysenko K. Ostrikov P. P. Rutkevych S. Xu |
| Affiliation: | a Plasma Sources and Applications Center, School of Science, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637 616, Singapore b School of Physics, The University of Sydney, NSW 2006, Australia |
| Abstract: | The results of numerical simulation of the equilibrium parameters of a low pressure nanopowder-generating discharge in silane for the plasma enhanced chemical vapor deposition (PECVD) of nanostructured silicon-based films are presented. It is shown that a low electron temperature and a low density of negative SiH3− ions are favorable for the PECVD process. This opens a possibility to predict the main parameters of the reactive plasma and plasma-nucleated nanoparticles, and hence, to control the quality of silicon nanofilms. |
| Keywords: | Nanoparticles Silane plasma Thin films |
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