基于THz-TDR的芯片金属微带线缺陷检测

针对体积小、走线密集、集成度高的封装芯片缺陷检测，目前的主要检测手段存在精度低、周期长等缺点。为弥补传统检测方法的不足，作者结合太赫兹技术与时域反射技术，探究对芯片上金属导线缺陷检测的可行性。首先在不同宽度的金属微带线上加工了不同比例的凸起、凹槽缺陷，模拟集成芯片中金属导线的不完全开/短路等阻抗不匹配情况，利用太赫兹时域反射计采集其时域反射信号。然后根据时域反射脉冲对应的时间分别对不同缺陷程度、不同缺陷类型进行定性分析，并精确计算出了芯片上金属微带线的缺陷位置。最后利用有限元分析法对硅基底上存在缺陷的金属微带线进行仿真分析，与实验结果具有良好的一致性。该研究表明，太赫兹技术与时域反射技术结合能够实现对芯片上金属导线缺陷的诊断检测，为集成芯片的缺陷检测提供了经验参考。

Metal microstrip line defect detection of chip based on THz-TDR technology

The current main detection methods for packaging chip defects with small size， dense wiring， and high integration have drawbacks such as low accuracy and long cycle time. To compensate for the shortcomings of traditional detection methods， this study combines terahertz technology with time-domain reflection technology to explore the feasibility of detecting metal wire defects on chips. Firstly， different proportions of convex defects and concave defects were processed on metal microstrip lines of different widths to simulate incomplete opening/short circuits of metal wires in integrated chips. The time-domain reflection signals were collected using a terahertz time-domain reflectometer. Then， qualitative analysis was conducted on different defect degrees and types based on the corresponding time of time-domain reflection pulses， and the defect positions of the metal wires on the chip were accurately calculated. Finally， the finite element analysis method was used to simulate and analyze the metal wires with defects on the silicon substrate， which showed perfect consistency with the experimental results. This research shows that the combined terahertz technology with time-domain reflection technology can achieve the diagnosis and detection of metal wire defects on chips， providing an empirical reference for defect detection in integrated chips.