A novel silicide nanopatterning method for the fabrication of ultra-short channel Schottky-tunneling MOSFETs

A novel nanometer patterning technique was developed to pattern epitaxial CoSi₂ layers and to fabricate Schottky-tunneling MOSFETs. The nanopatterning method is based on the local oxidation of silicide layers. A feature size as small as 50 nm was obtained for 20 nm epitaxial CoSi₂ layers on Si(100) after patterning by local rapid thermal oxidation in dry oxygen. A Schottky-tunneling MOSFET with epitaxial CoSi₂ Schottky contacts at both the source and the drain was fabricated using this nanopatterning method to make the 100 nm gate. The device shows good I–V characteristics at 300 K.