InSb阵列探测芯片的感应耦合等离子反应刻蚀研究

利用感应耦合等离子（ICP）反应刻蚀（RIE）进行了InSb阵列芯片台面刻蚀，并利用轮廓仪、SEM及XRD对台面形貌以及刻蚀损伤进行分析。采用优化的ICP刻蚀参数，实现的刻蚀速率为70~90 nm/min，刻蚀台阶垂直度~80°，刻蚀表面平整光滑、损伤低。与常规的湿法腐蚀相比，明显降低了侧向钻蚀。台面采用此反应刻蚀工艺，制备了具有理想I-V特性的320×256 InSb探测阵列芯片，在-500 mV到零偏压范围内，光敏元（面积23 μm×23 μm）的动态阻抗（Rd）大于100 MΩ。

Inductively coupled plasma reactive ion etching of InSb photovoltaic detector arrays

This work presents the study results of using inductively coupled plasma (ICP)-reactive ion etching (RIE) for fabricating InSb mesa with CH4/H2/Ar plasma.With optimized ICP etching parameters,good etching results have been obtained. Etch rates is about 70 to 90 nanometers per minute,sidewall angles of etched mesa is about 80°,and the etched surface is as smooth as that before the RIE process and with low damage.The lateral etching effect commonly encountered in wet etching has been reduced distinctly.320×256 InSb detective array with the mesa fabricated with the ICP-RIE have been developed also.The current-voltage characteristic of this detector measured at 77 K is as good as that of the devices fabricated by wet etching.