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| 用InGaAs材料制作的2.6 μm光电探测器 | |
| 作者姓名： | 潘青 |
| 作者单位： | 重庆光电技术研究所,重庆,400060 |
| 摘 要： | 2.6 μm In0.82Ga0.18As/InPP-N heterojunction photodetectors are introduced.A compositionlly graded layer iseffective to accommodate the 20% lattice mismatch between the InP substrate and the In0.82Ga0.18Asactive layer of the device.The quantum efficiency is 70%～75% over the wavelength of 2.1μm～2.6μm,with dark current of 3.5 μA at -2 V reverse bias and the room temperature. |
| 关 键 词： | 光电探测器 InGaAs材料 晶格失配 组分渐变层 |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |