| 半导体陶瓷致冷材料的性能与结构 |
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| 引用本文： | 崔万秋,程皓,龚定农,张斗.半导体陶瓷致冷材料的性能与结构[J].材料研究学报,1993,7(3):219-224. |
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| 作者姓名： | 崔万秋 程皓 龚定农 张斗 |
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| 作者单位： | 武汉工业大学
(崔万秋，程皓，龚定农)，武汉工业大学(张斗) |
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| 摘 要： | 采用新的陶瓷工艺技术,在气氛保护条件下,通过固相烧结反应法制备出温差电多晶材料。对膺三元固溶体化合物 P 型(72%Sb_2Te_3+25%Bi_2Te_3+3%Sb_2Se_3)和 N 型(90%Bi_2Te_3+5%Sb_2Te_3+5%Sb_2Se_3)的掺杂陶瓷样品进行了性能与结构研究。找到了最佳工艺制度。样品性能参数为:N 型:α=186μV/K σ=1250Ω~(-1)·cm~(-1) λ=14.7mW/(cm.K) Z=2.9×10~(-3)/KP 型:α=220μV/K σ=900 Ω~(-1)·cm~(-1) λ=14.0mW/(cm.K) Z=3.1×10~(-3)/K
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| 关 键 词： | 温差电 半导体致冷 陶瓷 |
| 收稿时间： | 1993-06-25 |
| 修稿时间： | 1993-06-25 |
STRUCTURE AND PROPERTIES OF SEMICODUCTOR CERAMIC COOLING MATERIALS |
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| CUI Wanqiu CHENG Hao GONG Dingnong ZHANG Dou.STRUCTURE AND PROPERTIES OF SEMICODUCTOR CERAMIC COOLING MATERIALS[J].Chinese Journal of Materials Research,1993,7(3):219-224. |
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| Authors: | CUI Wanqiu CHENG Hao GONG Dingnong ZHANG Dou |
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| Affiliation: | Wuhan University of Technology |
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| Abstract: | Thermoelectric polycrystal ceramic materials were prepared by a new ceramictechnology.The specimens were sintered by solid reaction in a sealed evacuated quartz tube.The new ceramic cooling materials have a inhomogeneous structure, but higher mechanicalstrength and the thermoelectric properies.The P-type 72%Sb_2Te_3+25%Bi_2Te_3+3%Sb_2Se_3doped and N-type 90%Bi_2Te_3+5%Sb_2Te_3+5%Sb_2Se_3 doped were studied.High qualityBi_2Te_3-Sb_2Te_3-Sb_2Se_3 pseudo-ternary solid solution can be prepared under optimum technol-ogy conditions.The polycrystal ceramic materials have a obvious layered structure,but sinter-ing is closer. |
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| Keywords: | thermoelectricity semiconductor refrigeration ceramic |
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