| 低电阻率高居里点PTCR材料的研究 |
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| 引用本文： | 胡毅,陈亿裕,苏卫彦.低电阻率高居里点PTCR材料的研究[J].电子元件与材料,2006,25(6):61-63. |
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| 作者姓名： | 胡毅 陈亿裕 苏卫彦 |
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| 作者单位： | 华南理工大学电子材料科学与工程系,广东,广州,510640 |
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| 摘 要： | 为了获得适合低压特种变压器、手机等用过流过热保护作用的高居里点、低电阻率的PTCR材料,在采用传统的电子陶瓷制造工艺的基础上,通过液相施主掺杂及对改性剂配方优化的方法进行了研究。当液相掺杂Sb3+的添加量为0.1%时(摩尔分数),获得了居里点tC为150℃、ρv为4.7?.cm、升阻比lg(ρmax/ρmin)为3.3的PTC材料。通过电性能测试、SEM显微结构分析和复阻抗测试,探讨了作用机理。
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| 关 键 词： | 电子技术 PTCR材料 低电阻率 液相掺杂 高居里点 |
| 文章编号： | 1001-2028（2006）06-0061-03 |
| 收稿时间： | 2005-12-15 |
| 修稿时间： | 2005-12-15 |
Study on PTCR Material of High Curie Point and Low Resistivity |
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| HU Yi,CHEN Yi-yu,SU Wei-yan.Study on PTCR Material of High Curie Point and Low Resistivity[J].Electronic Components & Materials,2006,25(6):61-63. |
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| Authors: | HU Yi CHEN Yi-yu SU Wei-yan |
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| Abstract: | Doping liquid-phase donor and optimizing the proportion of other donors were used to acquire high Curie point and low resistivity PTCR material for current-limiting and temperature-limiting in low-tension transformer,mobile etc.The high performance PTCR material of which Curie point 150℃,room temperature resistivity 4.7 ?.cm,ratio of lg(ρmax / ρmin)= 3.3,have been obtained when x(Sb3+) is 0.1%.The mechanism of low resistivity is also investigated by SEM,complex impedance testing etc. |
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| Keywords: | electronic technology PTCR materials low resistivity liquid-phase donor doping high Curie point |
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