Effects of thermal oxidation conditions of silicon electrodes on cathodic electrochemiluminescence of Ru(bpy)3 chelate |
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| Authors: | Qinghong Jiang Hanna Ketamo Johanna Suomi Sakari Kulmala |
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| Affiliation: | a Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, Fin-02015 HUT, Finland
b Microelectronics Centre, Helsinki University of Technology, P.O. Box 3500, FIN-02015 HUT, Finland |
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| Abstract: | Hot electrons emitted from thin oxide film-coated heavily doped silicon electrodes by cathodic pulse polarization can induce electrochemiluminescence from luminophores. The intensity of electrochemiluminescence produced at the electrode surface is dependent on the features of thin oxide films formed by thermal oxidation. As a preliminary study, we investigated the effect of thermal oxide growth conditions on the intensity of electrochemiluminescence produced at these electrodes, such as oxidation atmospheres, oxidation temperature, oxidation time and pre-treatment of wafers, using ruthenium(II) tris-(2,2′-bipyridine) chelate as a model luminophore. Optimal oxidation conditions of heavily doped silicon electrodes were obtained for the generation of intense electrochemiluminescence at this kind of silicon electrodes. |
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| Keywords: | Electrochemiluminescence (ECL) Thermal oxidation Oxide film-coated silicon electrode Hot electron Ruthenium(II) tris-(2 2&prime -bipyridine) chelate |
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