Room-temperature self-organised In/sub 0.5/Ga/sub 0.5/As quantum dot laser on silicon |
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| Authors: | Mi Z Bhattacharya P Yang J Pipe KP |
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| Affiliation: | Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA; |
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| Abstract: | The first room-temperature operation of In/sub 0.5/Ga/sub 0.5/As quantum dot lasers grown directly on Si substrates with a thin (/spl les/2 /spl mu/m) GaAs buffer layer is reported. The devices are characterised by J/sub th//spl sim/1500 A/cm/sup 2/, output power >50 mW, and large T/sub 0/ (244 K) and constant output slope efficiency (/spl ges/0.3 W/A) in the temperature range 5-95/spl deg/C. |
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