High frequency characteristics of tin oxide thin films on Si |
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Authors: | Ö Faruk Yüksel SB Ocak |
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Affiliation: | a Department of Physics, Faculty of Arts and Science, Selçuk University, Kampus, Konya 42031, Turkey b PK 14 Etlik, Ankara, Turkey |
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Abstract: | High frequency characteristics of tin oxide (SnO2) thin films were studied. SnO2 thin films have been successfully grown on n-type Si (111) substrates by using a spray deposition technique. The capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the metal-oxide-semiconductor (Au/SnO2/n-Si) Schottky diodes were investigated in the high frequency range from 300 kHz to 5 MHz. It has been shown that the interface state density, Dit, ranges from 2.44 × 1013 cm−2 eV−1 at 300 kHz to 0.57 × 1013 cm−2 eV−1 at 5 MHz and exponentially decreases with increasing frequency. The C-V and G/ω-V characteristics confirm that the interface state density and series resistance of the diode are important parameters that strongly influence the electrical parameters exhibited by the metal-oxide-semiconductor structure. |
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Keywords: | MOS diodes SnO2 Series resistance Interface state density |
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