Contribution study of properties of copper indium diselenide thin films |
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| Authors: | S Mehdaoui O Aissaoui M Benabdesslem L Mahdjoubi |
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| Affiliation: | a Laboratoire d'Etudes des Surfaces et Interfaces de la Matière Solide (LESIMS), Département de physique, Université Badji Mokhtar, Annaba, BP. 12, 23200, Annaba, Algérie
b ENSI-CAEN/SIFCAM-UMR-CNRS 6176, 6-Boulevard du Maréchal-Juin, 14032 Cedex, France |
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| Abstract: | Stoichiometric powder of CuInSe2 (CIS) was prepared from molten stoichiometric quantities of the elements. The structure analyzed by X-ray diffraction powder (XRD), shows mainly the chalcopyrite phase. CIS polycrystalline thin films deposited from this powder have been grown on glass substrates in vacuum by thermal evaporation method. The structural and electrical properties of both as-deposited and annealed films were studied using X-ray diffraction and dark conductivity measurements respectively. As-prepared films at room temperature showed an amorphous structure. However, the chalcopyrite structure with (112) preferential orientation was observed after annealing in vacuum at 400 °C during 30 min. The influence of the annealing process on the dark conductivity of the films was also discussed. |
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| Keywords: | Ternary semiconductors Chalcopyrite Thin films Activation energies Defects |
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