MBE—Technology for nanoelectronics |
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| Authors: | Kamil Kosiel |
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| Affiliation: | Institute of Electron Technology (IET), Al. Lotników 32/46, 02-668 Warsaw, Poland |
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| Abstract: | Molecular beam epitaxy (MBE) is presented as a powerful and flexible technology for research and development (R&D) as well as for mass production of nanoelectronic structures, based on a huge variety of materials. Its historical background, basic properties, advantages—in particular the production potential—as well as some trends in the field are shown. |
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| Keywords: | Molecular beam epitaxy Ultra-high vacuum Heterostructures III-Vs II-IVs Si Electronics |
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