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C波段功率GaAs MESFET的可靠性
摘    要:本文通过功率GaAs MESFET的筛选与环境、寿命试验阐述了器件的早期失效模式模型,估计了可靠性水平,指出了主要失效因素,并用实验方法讨论了突变烧毁失效,分析了失效原因,探讨了提高可靠性的途径。


Reliability of C-Band Power GaAs MESFET's
Abstract:The paper describes modeling of early failure model of power GaAs MESFET with its ageing test,environmental and life tests. The degree of reliability is briefly estimated.The main failure factors are pointed on as well. And catastrophic failure burn is discussed with experimental method in detail.Failure factors are also analysed. The emphasis is laid on a possible method which can improve the reliability.
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