高功率微波效应的多物理场建模方法研究

为了实现对微波器件高功率微波效应的分析，主要从不同尺度半导体器件和波导器件出发，基于具有谱精度的谱元时域法，开展从微米尺度到纳米尺度半导体器件电热耦合一体化分析的方法以及高功率微波气体放电效应及抑制机理的研究.得到了半导体器件在电磁信号作用下发生的电热参数分布变化规律和微波器件在高功率微波下发生的气体放电及其抑制机理，根据以上相关效应机理，可为复杂电磁环境中的器件设计提供理论指导.

Multi-physics modeling method of high power microwave effect

In order to realize the analysis of microwave devices effected by high power microwave, we mainly studied the semiconductor devices with different scales and waveguide devices. Based on the spectral element method time domain(SETD) method owning spectral accuracy, we have performed the investigations of electro-thermal coupling analysis for semiconductor devices from the micron scale to the nano scale and the analysis for the gas discharge and its inhibition mechanism under the high power microwave environment. Finally, we obtained the variation law of electrical and thermal parameters inside the semiconductor devices effected by electromagnetic signals and gas discharge and its inhibition mechanism inside the microwave devices under the high power microwave environment. The related effect mechanism provids a theoretical guidance for the device design in the complex electromagnetic environment.