| 高速高饱和InGaAs/InP单行载流子光电二极管 |
| |
| 引用本文： | 夏力臣,高新江. 高速高饱和InGaAs/InP单行载流子光电二极管[J]. 半导体光电, 2004, 25(3): 169-173 |
| |
| 作者姓名： | 夏力臣 高新江 |
| |
| 作者单位： | 电子科技大学,光电信息学院,四川,成都,610054;重庆光电技术研究所,重庆,400060 |
| |
| 摘 要： | InGaAs/InP单行载流子光电二极管(UTC-PD)是近年来研发的一种新型光电器件.UTC-PD是一种由p型中性光吸收层和n型宽带隙集结层构成,并且只用电子作为有源载流子的光电二极管.详细地介绍了UTC-PD的工作原理、结构设计、制作工艺及典型应用.
|
| 关 键 词： | 光纤通信 光电二极管 高饱和输出 3 dB带宽 空间电荷效应 响应度 |
| 文章编号： | 1001-5868(2004)03-0169-05 |
| 修稿时间： | 2003-12-25 |
High Speed and High-saturation Output InGaAs/InP Uni-traveling-carrier Photodiodes |
| |
| XIA Li-chen,GAO Xin-jiang. High Speed and High-saturation Output InGaAs/InP Uni-traveling-carrier Photodiodes[J]. Semiconductor Optoelectronics, 2004, 25(3): 169-173 |
| |
| Authors: | XIA Li-chen GAO Xin-jiang |
| |
| Affiliation: | XIA Li-chen1,GAO Xin-jiang2 |
| |
| Abstract: | Uni-traveling-carrier photodiodes(UTC-PDs) with high speed and high-saturation output have been developed recently. The active area of UTC-PD is consisted of a p-type photo-absorption layer and n-type wide-gap electron collector layer, within it only electrons are as the active carriers. The operation principle, structural design, fabrication technique and various applications of UTC-PDs are described. |
| |
| Keywords: | fiber-optic communication photodiode high saturation output 3 dB bandwidth space charge effect responsivity |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
