基于Ka波段分布式MEMS移相器芯片微封装研究

本文提出一种适用于Ka波段分布式MEMS移相器的新型封装结构——具有垂直互连线的薄硅作为分布式MEMS移相器衬底，并用芯片微封装方法对移相器进行封装。采用CST模拟软件研究封装结构对移相器射频性能影响，模拟结构表明：当封装结构衬底厚度、垂直互连线半径和空腔高度分别为450μm、50μm和80μm时，Ka波段分布式MEMS移相器的插入损耗小于0．55dB，回波损耗优于12dB，相移量具有很好的线性关系，说明该新型封装结构非常适合RFMEMS器件低成本批量封装。

Wafer level micropackaging based on Ka band distributed MEMS phase shifters

In this paper, a novel packaging structure model which is performed using wafer level micropackaging on the thin silicon substrate as the Ka band distributed MEMS phase shifters wafer with vertical feedthrough is presented. The RF effects of the proposed packaging structure which include substrate thickness, vertical feedthrough radius and cavity height on the performance of distributed MEMS phase shifter are investigated using Microwave Studio(CST). Simulation results show that the insertion loss is less 0.55 dB, the return loss is under 12 dB, and the phase shifts have well linear relation at the Ka band when the thickness, radius and height is 450 μm, 50 μm and 80 μm, respectively. This indicated that the novel packaging structure can be used to low cost packaging for volume production of RF MEMS devices.