The effect of thermal treatment on device characteristic and reliability for sub-100-nm CMOSFETs |
| |
| Authors: | Wen-Kuan Yeh Yean-Kuen Fang Mao-Chieh Chen |
| |
| Affiliation: | Electr. Eng. Dept., Nat. Univ. of Kaohsiung, Taiwan; |
| |
| Abstract: | The effect of post-thermal annealing after halo implantation on device characteristic and reliability of sub-100-nm CMOSFETs was investigated. We found that the control of annealing time is more efficient than that of annealing temperature with respect to improving the hot-carrier-induced degradation. The best result of device performance and reliability was obtained by a post-thermal annealing treatment performed at medium temperatures (e.g., 900/spl deg/C) for a longer time (>1 min). |
| |
| Keywords: | |
|
|
