GaxIn1-xAsyP1-y-InPtensile-strained quantum wells for 1.3-μm low-threshold lasers

Ga_xIn_1-xAs_yP_1-y-InP tensile-strained multiple quantum wells (MQWs) grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) are studied for the application to 1.3-μm lasers. High-resolution X-ray diffraction curves show good agreement with theoretical simulation. Clear energy separation of light hole and heavy hole bands is observed in the room temperature photoluminescence measurement. Threshold characteristics of -1.15% tensile-strained MQW lasers with graded index separate confinement heterostructure (GRINSCH) are investigated. The minimum threshold current density per well (J_th/N_w) for infinite cavity length obtained is 100 A/cm² for the device with a well number of 3. Tensile strain dependence of J_th/N _w for an infinite cavity is also clarified