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单晶硅片在脉冲激光作用下的断裂行为
引用本文:刘剑,陆建,倪晓武,戴罡,张梁. 单晶硅片在脉冲激光作用下的断裂行为[J]. 光学精密工程, 2011, 19(2): 414-420. DOI: 10.3788/OPE.20111902.0414
作者姓名:刘剑  陆建  倪晓武  戴罡  张梁
作者单位:南京理工大学理学院应用物理系,江苏,南京,210094
基金项目:江苏省创新基金资助项目(No.AD20286)
摘    要:基于脆性材料在激光辐照下的断裂行为,将可控断裂激光切割技术应用于脆性材料的加工.为了分析脉冲激光辐照脆性材料过程及脉冲激光扫描过程中产生的断裂行为机理,采用数值计算方法建立了含有裂纹的三维有限元热弹计算模型.分析了脉冲激光辐照单晶硅片过程中温度场和热应力场的变化情况,并模拟计算了硅片边缘含有裂纹时裂纹尖端应力强度因子的...

关 键 词:单晶硅片  断裂  脉冲激光  热应力  应力强度因子

Fracture behavior during pulsed laser irradiating silicon wafer
LIU Jian,LU Jian,NI Xiao-wu,DAI Gang,ZHANG Liang. Fracture behavior during pulsed laser irradiating silicon wafer[J]. Optics and Precision Engineering, 2011, 19(2): 414-420. DOI: 10.3788/OPE.20111902.0414
Authors:LIU Jian  LU Jian  NI Xiao-wu  DAI Gang  ZHANG Liang
Affiliation:LIU Jian,LU Jian,NI Xiao-wu,DAI Gang,ZHANG Liang(Department of Applied Physics,Nanjing University of Science & Technology,Nanjing 210094,China)
Abstract:Based on the fracture behavior during laser irradiating brittle materials,a controlling fracture technique was used for cutting brittle materials.In order to investigate the mechanism of fracture behavior during pulsed laser irradiating single silicon,a three-dimensional finite element thermoelastic calculational model which contains a pre-existing crack was established based on the heat transfer theory.The development of the temperature field and thermal stress field were investigated during the pulse dura...
Keywords:silicon wafer  fracture  pulsed laser  thermal stress  stress intensity factor  
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