首页 | 本学科首页   官方微博 | 高级检索  
     

170ps激光脉冲辐照可见光面阵Si-CCD的实验
引用本文:蔡跃,叶锡生,马志亮,王立君,冯国斌,陈林柱.170ps激光脉冲辐照可见光面阵Si-CCD的实验[J].光学精密工程,2011,19(2):457-462.
作者姓名:蔡跃  叶锡生  马志亮  王立君  冯国斌  陈林柱
作者单位:西北核技术研究所激光与物质相互作用国家重点实验室,陕西,西安,710024
基金项目:激光与物质相互作用国家重点实验室基金资助项目(No.SKL110906)
摘    要:开展了532 nm ps激光辐照面阵Si-CCD的实验研究,建立了532 nm,170 ps激光辐照Si-CCD效应实验测量系统,观察到了各种典型的干扰和损伤效应现象并测量了阈值.对破坏后的CCD器件的微观结构进行了显微观察,并深入分析了各种典型实验现象和电路层面的损伤机理.开展了10 ns和150 f,激光对CCD探...

关 键 词:激光辐照  激光损伤  Ps激光脉冲  Si-CCD  阈值

Experiment of 170 ps laser pulse irradiation effect on visible plane array Si-CCD
CAI Yue,YE Xi-sheng,MA Zhi-liang,WANG Li-jun,FENG Guo-bin,CHEN Lin-zhu.Experiment of 170 ps laser pulse irradiation effect on visible plane array Si-CCD[J].Optics and Precision Engineering,2011,19(2):457-462.
Authors:CAI Yue  YE Xi-sheng  MA Zhi-liang  WANG Li-jun  FENG Guo-bin  CHEN Lin-zhu
Affiliation:(State Key Laboratory of Laser Interaction with Matter,Northwest Institute of Nuclear Technology,Xi′an 710024,China)
Abstract:A measurement system was established to study the laser pulse irradiation effects on a plane array Si-CCD at the wavelength of 532 nm and the pulse duration of 170 ps.Experiments on Si-CCD under picosecond laser irradiation were carried out,the typical experiment phenomena were observed and the corresponding energy density thresholds were measured.Furthermore,the microstructure of damaged CCD was observed,and the damage mechanism was analyzed.It was demonstrated that the most severe failures could result fr...
Keywords:laser irradiation  laser damage  ps laser pulse  Si-CCD  threshold  
本文献已被 CNKI 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号